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1

Cl[sub 2]/BCl[sub 3]/Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AlGaN/GaN high-electron mobility transistors

Kim, Hyeongnam, Schuette, Michael L., Lu, Wu

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2011

Language:

english

File:

PDF, 597 KB

english, 2011

2

Analysis of trapping effects in AlGaN/GaN HEMTs based on near zero bias output conductance

Hyeongnam Kim, Wu Lu

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 116 KB

english, 2010

3

TRAP BEHAVIOR IN AlGaN/GaN HEMTs BY POST-GATE-ANNEALING

KIM, HYEONGNAM, LEE, JAESUN, LU, WU

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 304 KB

english, 2004

4

On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs

Pagnano, Dario, Longobardi, Giorgia, Udrea, Florin, Sun, Jinming, Imam, Mohamed, Garg, Reenu, Kim, Hyeongnam, Charles, Alain

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.51 MB

english, 2018

5

FABRICATION OF SELF-ALIGNED T-GATE AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTORS

LEE, JAESUN, LIU, DONGMIN, KIM, HYEONGNAM, SCHUETTE, MICHAEL L., LU, WU, FLYNN, JEFFREY S., BRANDES, GEORGE R.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 327 KB

english, 2004

6

Arylstibonic acids: Novel inhibitors and activators of human topoisomerase IB

Hyeongnam Kim, John H. Cardellina II, Rhone Akee, James J. Champoux, James T. Stivers

Journal:

Bioorganic Chemistry

Year:

2008

Language:

english

File:

PDF, 736 KB

english, 2008

7

Influence of CdS heat treatment on the microstructure of CdS and the performance of CdS/CdTe solar cells

Hyeongnam Kim, Donghwan Kim

Journal:

Solar Energy Materials and Solar Cells

Year:

2001

Language:

english

File:

PDF, 309 KB

english, 2001

8

Spectroscopic measurement of the acid dissociation constant of 2-naphthol and the second dissociation constant of carbonic acid at elevated temperatures

Park, SungNam, Kim, Hyeongnam, Kim, Keon, Lee, JeongAe, Lho, Dong-seok

Journal:

Physical Chemistry Chemical Physics

Year:

1999

Language:

english

File:

PDF, 146 KB

english, 1999

9

Gate current leakage and breakdown mechanism in unpassivated AlGaN∕GaN high electron mobility transistors by post-gate annealing

Kim, Hyeongnam, Lee, Jaesun, Liu, Dongmin, Lu, Wu

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 384 KB

english, 2005

10

Cross-polarization schemes for peptide samples oriented in hydrated phospholipid bilayers

Hyeongnam Kim, Timothy A. Cross, Riqiang Fu

Journal:

Journal of Magnetic Resonance

Year:

2004

Language:

english

File:

PDF, 176 KB

english, 2004

11

[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - Growth, fabrication and characterization of In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InAs/sub 0.3/P/sub 0.7/ composite channel HEMTs

Dongmin Liu,, Hudait, M., Yong Lin,, Hyeongnam Kim,, Ringel, S.A., Wu Lu,

Year:

2005

Language:

english

File:

PDF, 78 KB

english, 2005

12

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Extraction of effective trap density and gate length in AlGaN/GaN HEMTs based on pulsed I-V characteristics

Hyeongnam Kim,, Wu Lu,

Year:

2007

Language:

english

File:

PDF, 244 KB

english, 2007

13

The effect of Hartmann–Hahn mismatching on polarization inversion spin exchange at the magic angle

Riqiang Fu, Changlin Tian, Hyeongnam Kim, Scott A Smith, Timothy A Cross

Journal:

Journal of Magnetic Resonance

Year:

2002

Language:

english

File:

PDF, 201 KB

english, 2002

14

Post-annealing effects on device performance of AlGaN/GaN HFETs

Jaesun Lee, Dongmin Liu, Hyeongnam Kim, Wu Lu

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 268 KB

english, 2004

15

Edge-field effects on gate capacitance, threshold voltage and low-field mobility in AlGaN/GaN HEMTs

Hyeongnam Kim, Michael L. Schuette, Wu Lu

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 202 KB

english, 2011

16

Gate length scaling study of InAlAs/InGaAs/InAsP composite channel HEMTs

Dongmin Liu, Mantu Hudait, Yong Lin, Hyeongnam Kim, Steven A. Ringel, Wu Lu

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 139 KB

english, 2007

17

[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - Fabrication of self-aligned T-gate AlGaN/GaN high electron mobility transistors

Jaesun Lee,, Dongmin Liu,, Hyeongnam Kim,, Schuette, M.L., Wu Lu,, Flynn, J.S., Brandes, G.R.

Year:

2004

Language:

english

File:

PDF, 882 KB

english, 2004

18

Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures

Lin, Zhaojun, Kim, Hyeongnam, Lee, Jaesun, Lu, Wu

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 404 KB

english, 2004

19

[IEEE 2017 IEEE 5th Workshop on Wide-Bandgap Power Devices and Applications (WiPDA) - Albuquerque, NM (2017.10.30-2017.11.1)] 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Reverse bias lifetime analysis of 600V enhancement mode GaN devices

Kannan, Hari, Veereddy, Deepak, Wang, Zhaofeng, Khalil, Sameh, Charles, Alain, Kim, Hyeongnam, Imam, Mohamed

Year:

2017

Language:

english

File:

PDF, 312 KB

english, 2017

20

Passivation of Surface and Interface States in AlGaN/GaN HEMT Structures by Annealing

Hyeongnam Kim, Michael L. Schuette, Jaesun Lee, Wu Lu, James C. Mabon

Journal:

Journal of Electronic Materials

Year:

2007

Language:

english

File:

PDF, 400 KB

english, 2007

21

[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - Trap behavior in AlGaN/GaN HEMTs by post-gateannealing

Hyeongnam Kim,, Jaesun Lee,, Wu Lu,

Year:

2004

Language:

english

File:

PDF, 857 KB

english, 2004

22

Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors

Hyeongnam Kim, Digbijoy Nath, Siddharth Rajan, Wu Lu

Journal:

Journal of Electronic Materials

Year:

2013

Language:

english

File:

PDF, 404 KB

english, 2013

23

A study of polycrystalline silicon thin films as a seed layer in liquid phase epitaxy using aluminum-induced crystallization

Hyeongnam Kim, Gyuyul Lee, Daewon Kim, Soo-Hong Lee

Journal:

Current Applied Physics

Year:

2002

Language:

english

File:

PDF, 233 KB

english, 2002

24

Temperature Dependence of Electron Transport in ZnO Nanowire Field Effect Transistors

Shao, Ye, Yoon, Jongwon, Kim, Hyeongnam, Lee, Takhee, Lu, Wu

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 1.35 MB

english, 2014

25

Postprocessing annealing effects on direct current and microwave performance of AlGaN∕GaN high electron mobility transistors

Lee, Jaesun, Liu, Dongmin, Kim, Hyeongnam, Lu, Wu

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 299 KB

english, 2004

26

Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface

Hyeongnam Kim, Daewon Kim, Gyuyul Lee, Dongseop Kim, Soo Hong Lee

Journal:

Solar Energy Materials and Solar Cells

Year:

2002

Language:

english

File:

PDF, 201 KB

english, 2002

27

[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - Characterization of Post-Gate Annealing Impact on Traps in AlGaN/GaN Schottky Diodes by Capacitance and Conductance Dispersion

Junghui Song,, Hyeongnam Kim,, Wu Lu,

Year:

2005

Language:

english

File:

PDF, 282 KB

english, 2005

28

[IEEE 2005 Asia-Pacific Microwave - Suzhou, China (04-07 Dec. 2005)] 2005 Asia-Pacific Microwave Conference Proceedings - 0.25μm In>inf<0.52>/inf<Al>inf<0.48>/inf<As/In>inf<0.53>/inf<Ga>inf<0.47>/inf<As/InAs>inf<0.3>/inf<P>inf<0.7>/inf<Composite Channel HEMTs with an f>inf<T>/inf<of 115GHz

Dongmin Liu,, Hudait, M., Yong Lin,, Hyeongnam Kim,, Ringel, S.A., Wu Lu,

Year:

2005

Language:

english

File:

PDF, 179 KB

english, 2005

29

Analysis of surface states in ZnO nanowire field effect transistors

Shao, Ye, Yoon, Jongwon, Kim, Hyeongnam, Lee, Takhee, Lu, Wu

Journal:

Applied Surface Science

Year:

2014

Language:

english

File:

PDF, 2.15 MB

english, 2014

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